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Lead-free Green
LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR General Description
*
LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device.
NEW PRODUCT
6 5 4
1 2 3
Features
* * * * * *
Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2)
C_Q1 6
Fig. 1: SOT-363
B_Q1 5
S_Q2 4
Mechanical Data
* * * * * * * *
Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approximate) Sub-Component P/N DDTB142JU_DIE DSNM6047_DIE (with Gate Pull-Down Resistor) Refere nce Q1 Q2 Device Type PNP Transistor N-MOSFET
C DDTB142JU_DIE
Q1 PNP
B E
R1 10K
R2 470
R3 37K
S
Q2 NMOS
G
DSNM6047_DIE D
1 E_Q1
2 G_Q2
3 D_Q2
Fig. 2 Schematic and Pin Configuration
R1 (NOM) 10K
R2 (NOM) 470
R3 (NOM) 37K
Figure 2 2
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 3) Power Derating Factor above 125C Output Current Symbol Pd Pder Iout Value 200 1.6 200 Unit mW mW/C mA
Thermal Characteristics
Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to One Heated Junction of PNP Transistor)
Notes:
Symbol Tj,Tstg RJA
Value -55 to +150 625
Unit C C/W
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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NEW PRODUCT
Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC
@ TA = 25C unless otherwise specified Value -50 -50 -50 +5 to -6 -200 Unit V V V V mA
Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2)
Characteristic Drain-Source Voltage Drain Gate Voltage (RGS 1MOhm) Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Source Current Continuous Pulsed (tp<50 uS) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%)
@ TA = 25C unless otherwise specified
Symbol VDSS VDGR VGSS ID IS
Value 60 60 +/-20 +/-40 115 800 115
Unit V V V mA mA
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Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@ TA = 25C unless otherwise specified Max -100 -500 -1 -0.3 -500 -0.15 -0.2 -0.2 -0.25 -0.25 -0.3 1.5 -0.15 -28 -1.3 -3.6 -5.5 Unit nA nA mA V V V V nA V V V V V V V V mA V V K K Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10 uA, IE = 0 IC = -2 mA, IB = 0 VCE = -5V, IC = -100uA VCC = -5V, VB = -0.05V, RL = 1K VCC = -50V, VI = 0V IC = -10 mA, IB = -0.5 mA IC = -50mA, IB = -5mA IC = -20mA, IB = -1mA IC = -100mA, IB= -10mA IC = -200mA, IB= -10mA IC = -200mA, IB = -20mA IC = -200mA, IB = -10mA VCE = -5V, IC = -20 mA VCE = -5V, IC = -50 mA VCE = -5V, IC = -100 mA VCE = -5V, IC = -200 mA VO = -0.3V, IC = -2 mA VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA VI = -5V VCE = -5V, IC = 200mA IC = -50mA, IB = -5mA IC = -80mA, IB = -8mA
NEW PRODUCT
Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS
Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO VI(OFF) VOH IO(OFF)
Min -50 -50 -4.9
Typ -0.5 -0.55 150 215 245 250 -0.7 -0.065 -9.2 -1.125 -3.2 -4.55 0.47 10 21
Collector-Emitter Saturation Voltage
VCE(SAT)
Equivalent on-resistance*
RCE(SAT)
60 60 60 60 -2.45
DC Current Gain
hFE
Input On Voltage Output Voltage (equivalent to VCE(SAT) or VO(ON) ) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor (Base), +/- 30% Pull-up Resistor (Base to Vcc supply), +/- 30% Resistor Ratio (Input Resistor/Pull-up resistor) +/- 20% SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) Collector capacitance, (Ccbo-Output Capacitance)
VI(ON) VOL Ii VBE(ON) VBE(SAT) R2 R1 R1/R2
fT CC

200 20

CE = -10V, MHz V= 100MHz IE = -5mA, f
pF
VCB = -10V, IE = 0A, f = 1MHz
* Pulse Test: Pulse width, tp<300 S, Duty Cycle, d<=0.02
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NEW PRODUCT
Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Forward Transconductance Gate Pull-Down Resistor, +/- 30% DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Time Turn-Off Delay Time td(on) td(off) VSD IS ISM 0.88 20 40 ns ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm VGS = 0V, IS = 115 mA* Ciss Coss Crss 50 25 5 pF pF pF VDS = -25V, VGS = 0V, = 1MHz VGS(th) VDS(on) ID(on) RDS(on) gFS R3 1 500 80 80 1.86 0.08 0.15 1.55 1.4 240 350 37 2.2 1.5 3.75 3 2 V V mA mS VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS 2XVDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS 2XVDS(ON), ID = 115 mA VDS 2XVDS(ON), ID = 200 mA V(BR)DSS IDSS IGSSF IGSSR 60 1 0.95 -0.95 V A mA m VGS = 0V, ID = 10A VGS =0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Symbol Min Typ Max Unit Test Condition
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current 1.5 115 800 V mA mA
* Pulse Test: Pulse width, tp<300 S, Duty Cycle, d<=0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect.
Typical Characteristics
350 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3, Max Power Dissipation vs Ambient Temperature (Total Device)
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Typical Pre-Biased PNP Transistor (Q1) Characteristics
NEW PRODUCT
0.4 IC/IB = 10
0.6 IC/IB = 20
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE (V)
0.5
0.3
TA = 125C TA = 150C
0.4
0.2
0.3 TA = 125C 0.2 TA = 150C TA =-55C TA = 25C 0.1 TA = 85C 0 0.01
TA = -55C 0.1
TA = 85C TA = 25C
0 0.01 0.1 1
0.1
1
IC, COLLECTOR CURRENT (A) Fig. 4 VCE(SAT) vs. IC
30
IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC
VBE(SAT), BASE EMITTER VOLTAGE (V)
25
TA = 25C TA = 150C TA = 125C
VBE(ON), BASE EMITTER VOLTAGE (V)
IC/IB = 10
TA = 85C
3 2.5 2 1.5
IC/IB = 10 VCE = 5V
20
15 TA = -55C 10
TA = -55C TA = 25C
1 0.5
TA = 85C TA = 125C 100 1000
5
TA = 150C
0 1 10 100 1000
0
1 10
IC, COLLECTOR CURRENT (mA) Fig. 6 VBE(SAT) vs. IC
IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(ON) vs. IC
VCE = 5V 400 hFE, DC CURRENT GAIN TA = 125C 300 TA = 85C TA = 25C
TA = 150C
200
100
TA = -55C
0 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 8 hFE vs. IC
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Typical N-Channel MOSFET (Q2) Characteristics
1.8 TA = 25C 1.6 VGS = 10V
1.4 VDS = 10V TA =-55C 1.2 TA = 25C TA = 125C 1 TA = 85C 0.8
NEW PRODUCT
ID, DRAIN CURRENT (A)
1.2 VGS = 5V 1.0 0.8 VGS = 4V 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7
ID, DRAIN CURRENT (A)
1.4
VGS = 8V
VGS = 6V
0.6 TA = 150C 0.4
0.2
VGS = 3V
0 0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics
2.2
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W)
VDS = 10V VDS = VGS ID = 0.25mA Pulsed
5
VGS=5V Pulsed
4 TA = 125C 3 TA = 150C TA = 85C 2 TA = 25C TA = -55C 1
1.8
1.6
1.4
1.2
0 -75
-50 -25
0
25
50
75
100 125 150
0 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 12 Static Drain-Source On-Resistance vs. Drain Current 1
TJ, JUNCTION TEMPERATURE (C) Fig. 11 Gate Threshold Voltage vs. Junction Temperature
4
RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W)
7
VGS = 10V Pulsed
6 5 4 ID = 115mA 3 2 1 ID = 50mA
TA = 25C Pulsed
RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W)
3 TA = 125C TA = 150C
2
TA = 85C TA = 25C
1
TA = -55C
0 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage
ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current
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2.5
1 IS, REVERSE DRAIN CURRENT (A)
VGS = 10V Pulsed ID = 115mA
NEW PRODUCT
TA = 125C TA = 25C 0.1 TA = -55C TA = 150C TA = 85C
2 ID = 50mA 1.5
0.01
1
VGS = 5V Pulsed
0.5 -75 -50 -25 0 25 50 75 100 125 150
0.001 0 1 2 3 4 5
Tj, JUNCTION TEMPERATURE (C) Fig. 15 Static Drain-Source On-State Resistance vs. Junction Temperature
VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 16 Reverse Drain Current vs. Source-Drain Voltage
IS, REVERSE DRAIN CURRENT (A)
VGS = 10V VGS = 5V
gFS, FORWARD TRANSCONDUCTANCE (mS)
1
900 800 700 600 500 400 TA = 125C 300 200 100 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 18 Forward Transfer Conductance vs. Drain Current (VDS > ID *RDS(ON)) TA = 150C TA = 85C TA = 25C TA = -55C
0.1
TA= 25C Pulsed
0.01
0.001 0 0.5 1 1.5 2 2.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Body Diode Forward Voltage
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Application Details:
NEW PRODUCT
*
PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B02 can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 200 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 20 for one example of a typical application circuit used in conjunction with voltage regulator as a part of a power management system)
Vin
DDTB142JU
E Q1 B PNP C
Vout
R1 10K
LOAD
R2
470
DSNM6047
D Q2 S NMOS G
Control
R3 37K
Fig. 19 Circuit Diagram
Typical Application Circuit
5v Supply U1
Load Switch
Vin U3
U2 Point of Load IN OUT
Control Logic Circuit (PIC, Comparator etc)
GND
Vin OUT1
1
E_Q1 G_Q2 D_Q2
C_Q1 B_Q1 S_Q2
6 Vout 5 4 Gnd
Control 2 3
LNM200B02
Voltage Regulator
Diodes Inc.
Fig. 20
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LMN200B02
Ordering Information
(Note 5) Marking Code PM2 Packaging SOT-363 Shipping 3000/Tape & Reel
NEW PRODUCT
Device LMN200B02-7
Note:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM2
PM2 = Product Type Marking Code, YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Fig. 21 Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D
DS30658 Rev. 4 - 2
YM
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Mechanical Details
NEW PRODUCT
A
SOT-363 Dim A
BC
Min 0.1 1.15 2 0.3 1.8 0.9 0.25 0.1 0
Max 0.3 1.35 2.2 0.4 2.2 0.1 1 0.4 0.25 8
B C D F H
M
0.65 Nominal
H K
J K L M
J
D
F
L
Fig. 22
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
E
E
Figure 23 Dimensions Z G X Y C E SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65
Z
G
C
Y
X
* Typical dimensions in mm
Fig. 23
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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